Band gap determination of HgCdTe by ultra high vacuum scanning tunneling spectroscopy
نویسندگان
چکیده
منابع مشابه
Band offsets of InGaP/GaAs heterojunctions by scanning tunneling spectroscopy
Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions with InGaAs-like interfaces. Band offsets are probed using conductance spectra, with tip-induced band bending accounted for using 3-dimensional electrostatic potential simulations together with a planar computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP ...
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ژورنال
عنوان ژورنال: Journal of Infrared and Millimeter Waves
سال: 2013
ISSN: 1001-9014
DOI: 10.3724/sp.j.1010.2013.00145